器件名称: IRLBD59N04E
功能描述: HEXFET Power MOSFET
文件大小: 119.86KB 共8页
简 介:PD -93910
IRLBD59N04E
HEXFET Power MOSFET
l l l l l l
Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected
VDSS = 40V RDS(on) = 0.018 ID = 59A
Description
The IRLBD59N04E is a 40V, N-channel HEXFET power MOSFET with gate protection provided by integrated back to back zener diodes. Temperature sensing is given by the change in forward voltage drop of two antiparallel electrically isolated poly-silicon diodes. The IRLBD59N04E provides cost effective temperature sensing for system protection along with the quality and ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt IG VESD TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt VGS Clamp Current Electrostatic Votage Rating Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
5 Lead-D2Pak
Max.
59 41 230 130 0.89 ± 10 320 35 13 2.2 ± 50 ± 2.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V mJ A mJ V/ns mA kV °C °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ……
