器件名称:
IRLD024PbF
功能描述:
Power MOSFET
文件大小:
1592.51KB 共8页
简 介:
IRLD024, SiHLD024 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 18 4.5 12 Single D FEATURES 60 0.10 Dynamic dV/dt Rating For Automatic Insertion End Stackable Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRLD024PbF SiHLD024-E3 IRLD024 SiHLD024 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TC = 25 °C EAS PD dV/dt TJ, Tstg VGS at 5.0 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 60 ± 10 2.5 1.8 20 0.0083 91 1.3 4.5 - 55 to + 175 300d ……
