器件名称:
IRLD110PbF
功能描述:
Power MOSFET
文件大小:
1510.91KB 共8页
简 介:
IRLD110, SiHLD110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 6.1 2.6 3.3 Single D FEATURES 100 0.54 Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Lead (Pb)-free Available Available RoHS* COMPLIANT HEXDIP DESCRIPTION G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W. ORDERING INFORMATION Package Lead (Pb)-free SnPb HEXDIP IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 5.0 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR TC = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT 100 ± 10 1.0 0.70 8.0 0.0083 490 1.0 0.13 1.3 5.5 - 55 to + 175 300d W/°C mJ A mJ W V/ns °C A UNIT V Linear Derating Factor Single Pulse Avalanche Energyb Avalanche currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak ……
