器件名称: IRLI540G
功能描述: Power MOSFET
文件大小: 964.31KB 共8页
简 介:IRLI540G, SiHLI540G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5 V 64 9.4 27 Single
D
FEATURES
100 0.077
Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Logic-Level Gate Drive RDS (on) Specified at VGS = 4 V and 5 V Fast Switching Ease of Paralleling
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
G
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package SnPb TO-220 FULLPAK IRLI540G SiHLI540G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb TC = 25 °C EAS PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature……
