器件名称:
IRLI630A
功能描述:
ADVANCED POWER MOSFET
文件大小:
226.75KB 共7页
简 介:
$GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 150° C Operating Temperature Lower Leakage Current: 10A (Max.) @ VDS = 200V Lower RDS(ON): 0.335 (Typ.) IRLW/I630A BVDSS = 200 V RDS(on) = 0.4 ID = 9 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 200 9 5.7 32 ±20 54 9 6.9 5 3.1 69 0.55 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.81 40 62.5 °C/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B 1999 Fairchild Semiconductor Corporation 1 IRLW/I630A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ……
