器件名称:
IRLI640G
功能描述:
Power MOSFET
文件大小:
1727.01KB 共8页
简 介:
IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 66 9.0 38 Single D FEATURES 200 0.18 TO-220 FULLPAK Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Dist. 4.8 mm Logic-Level Gate Drive RDS(on) Specified at VGS = 4V and 5 V Fast Switching Ease of paralleling Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRLI640GPbF SiHLI640G-E3 IRLI640G SiHLI640G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum ……
