器件名称:
HZM68MFA
功能描述:
Silicon Planar Zener Diode for Surge Absorb
文件大小:
24.64KB 共5页
简 介:
HZM6.8MFA Silicon Planar Zener Diode for Surge Absorb ADE-208-833(Z) Rev 0 Dec. 1999 Features HZM6.8MFA has four devices in a monolithic, and can absorb surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8MFA Laser Mark 68M Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.8MFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25°C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd — Min 6.47 — — — 30 Typ — — — — — Max 7.00 2 130 30 — Unit V A pF kV Test Condition I Z = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 2 A at VR = 3.5V. 2 HZM6.8MFA Main Characteristic 10 -1 10 10 (A) 10 10 Zener Current 10 10 -2 -3 -4 Iz -5 -6 -7 10 10 -8 Ta=75°C Ta=25°C Ta=-25°C -9 0 1 2 3 4 5 6 7 8 Zener Voltage Vz (V) Fig.1 Zener current Vs. Zener voltage 250 1.0mm 200 Power Dissipation Pd (mW) Cu Foil 150 Printed circuit board 25 × 62 × 1.6t mm Material: Glass Epoxy Resin+Cu Foil 100 50 0 0 50 100 150 200 Ambient Temperature Ta (°C) Fig.2 Power Diss……
