器件名称:
K1381
功能描述:
Field Effect Transistor Silicon N Channel MOS Type (L2pai-MOSIII) Relay Drive, Motor Drive and DCDC Converter
文件大小:
444.15KB 共6页
简 介:
2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2πMOSIII) 2SK1381 Relay Drive, Motor Drive and DCDC Converter Applications 4 V gate drive Low drainsource ON resistance High forward transfer admittance Low leakage current Enhancementmode : RDS (ON) = 25 m (typ.) : |Yfs| = 33 S (typ.) : IDSS = 100 A (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 ±20 50 200 150 150 55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 0.833 50 Unit °C / W °C / W Weight: 4.6 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1381 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turnon time Switching ……
