器件名称:
k246
功能描述:
Ultrahigh-Speed Switching Applications
文件大小:
37.65KB 共3页
简 介:
Ordering number:ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features Low ON resistance. Ultrahigh-speed switching. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2128 [2SK2464] 8.2 7.8 6.2 3 8.4 10.0 0.4 0.2 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10s, duty cycle≤1% Tc=25C Conditions 1 : Gate 2 : Source 3 : Drain SANYO : ZP Ratings 30 ±20 45 180 50 150 –55 to +150 Unit V V A A W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss1 Ciss2 Coss Crss ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±20V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=22A ID=22A, VGS=10V VDS=0V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 2 20 30 8.5 3750 2700 2300 450 12 4300 Conditions Ratings min 30 100 ±100 4 typ max Unit V A nA V S m pF pF pF pF Continued on ……
