器件名称:
KRA526T
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小:
67.86KB 共5页
简 介:
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Output Current : -800mA. A F KRA521T~KRA526T EPITAXIAL PLANAR PNP TRANSISTOR E B 1 5 DIM MILLIMETERS _ 0.2 A 2.9 + B C D E F G H I J K L 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 G 2 3 4 G C L EQUIVALENT CIRCUIT OUT R1 R2 J J H TYPE NO. KRA521T KRA522T KRA523T KRA524T R1 (k ) 1 2.2 4.7 10 1 2.2 R2 (k 1 2.2 4.7 10 10 10 ) IN 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) COMMON(+) KRA525T KRA526T TSV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Q1 D MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRA521T~526T KRA521T KRA522T KRA523T KRA524T KRA525T KRA526T VO 1 CHARACTERISTIC RATING -50 -10, 10 -12, 10 -20, 10 -30, 10 -10, 5 -12, 6 Input Voltage VI Output Current Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) KRA521T~526T IO PD * Tj Tstg -800 0.9 150 -55 150 Marking 5 4 MARK SPEC TYPE MARK KRA521T PA KRA522T PB KRA523T PC KRA524T PD KRA525T PE KRA526T PF 1 2 3 Type Name 2002. 7. 9 Revision No : 2 I Q2 2 3 UNIT V V mA W Lot No. 1/5 KRA521T~KRA526T ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Output……
