器件名称:
KRA722T
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小:
68.01KB 共5页
简 介:
SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION. KRA721T~KRA726T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES With Built-in Bias Resistors. Simplify Circuit Design. High Output Current : -800mA. A F G K 1 B K 6 Reduce a Quantity of Parts and Manufacturing Process. 2 5 4 DIM A B C D E D F G H I J K L 3 MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 C L G EQUIVALENT CIRCUIT OUT R1 R2 J J H TYPE NO. KRA721T R1 (k ) 1 2.2 4.7 10 1 2.2 R2 (k 1 2.2 4.7 10 10 10 ) 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) COMMON (EMITTER) IN (BASE) OUT (COLLECTOR) IN KRA722T KRA723T KRA724T COMMON(+) KRA725T KRA726T EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 MAXIMUM RATING (Ta=25 Output Voltage ) SYMBOL KRA721T~726T KRA721T KRA722T KRA723T KRA724T KRA725T KRA726T VO -50 CHARACTERISTIC RATING -10, 10 -12, 10 -20, 10 -30, 10 -10, 5 -12, 6 Input Voltage VI Output Current Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 ) KRA721T~726T IO PD * Tj Tstg -800 0.9 150 -55 150 Marking 6 5 4 MARK SPEC TYPE MARK KRA721T PA KRA722T PB KRA723T PC KRA724T PD KRA725T PE KRA726T PF 1 2 3 Type Name 2002. 7. 9 Revision No : 2 I TS6 1 2 3 UNIT V V mA W Lot No. 1/5 KRA721T~KRA726T ELECTRICAL CHARACTERISTICS (Ta=2……
