器件名称:
KRA730E
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
文件大小:
49.81KB 共4页
简 介:
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density. A1 KRA730E~KRA734E EPITAXIAL PLANAR PNP TRANSISTOR B B1 Simplify Circuit Design. A C 1 6 5 2 3 4 EQUIVALENT CIRCUIT C B R1 EQUIVALENT CIRCUIT (TOP VIEW) H P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 C 6 5 4 Q1 Q2 E 1. 2. 3. 4. 5. 6. Q1 Q2 Q2 Q2 Q1 Q1 EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR 1 2 3 TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current ) SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA730E KRA731E Input Resistor KRA732E KRA733E KRA734E Note : * Characteristic of transistor only. ) SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 k V MHz UNIT nA nA Marking 6 5……
