器件名称:
KSE13003H2ASTU
功能描述:
NPN Silicon Transistor
文件大小:
466.72KB 共4页
简 介:
KSE13003 — NPN Silicon Transistor March 2008 KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor Control 1 TO-126 2.Collector 3.Base 1. Emitter Absolute Maximum Ratings* Symbol V CBO V CEO V EBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current T C = 25°C unless otherwise noted (notes_1) Parameter Value 700 400 9 1.5 3 0.75 20 150 -65 ~ 150 Units V V V A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. hFE Classification Classification hFE* * Test on VCE = 2V, IC = 0.5A. H1 9 ~ 16 H2 14~ 21 H3 19 ~ 26 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Electrical Characteristics Symbol BVCEO IEBO hFE VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage Conditions IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, I……
