器件名称:
KSE182
功能描述:
Low Power Audio Amplifier Low Current High Speed Switching Applications
文件大小:
50.52KB 共4页
简 介:
KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications 1 TO-126 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE180 : KSE181 : KSE182 1. Emitter Value 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : KSE180 : KSE181 : KSE182 Collector Cut-off Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 Emitter Cut-off Current DC Current Gain Test Condition IC = 10mA, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 250 Max. Units V V V A A A mA mA mA A ICBO VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150°C VCB = 80V, IE = 0 @ TC = 150°C VCB = 100V, IE = 0 @ TC = 150°C VBE = 7V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 500mA VCE = 1V, IC = 1.5A IC = 500mA, IB = 50mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA IC = 1.5A, IB = 150mA IC = 3A, IB = 600mA VCE = 1V, IC = 500mA VCE = 10V, IC = 100mA VCB = 10V, IE = 0, f = 0.1MHz 50 IEBO hFE VCE(sat……
