器件名称:
KSE44H
功能描述:
General Purpose Power Switching Applications
文件大小:
41.17KB 共4页
简 介:
KSE44H Series KSE44H Series General Purpose Power Switching Applications Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A Fast Switching Speeds Complement to KSE45H 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter : KSE44H 1,2 : KSE44H 4,5 : KSE44H 7,8 : KSE44H 10,11 Value 30 45 60 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W °C °C VEBO IC ICP PC PC TJ TSTG Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE44H 1,4,7,10 : KSE44H 2,5,8,11 *Collector-Emitter Saturation Voltage : KSE44H 1, 4, 7 10 : KSE44H 2, 5, 8,11 *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated VCEO, VEB = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 2A 35 60 1 1 1.5 50 130 300 500 140 V V V MHz pF ns ns ns Min. Typ. Max. 10 100 Units A A VCE(sat) IC = 8A, IB = 0.8A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC =20V, IC = 5A IB1 = - IB2 = 0.5A VBE (sat) fT Cob tON tSTG tF * Pulse test: PW≤300s, Duty cycle≤2% 2001 Fairchild Semiconduct……
