器件名称:
N02L083WC2AN
功能描述:
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
文件大小:
223.12KB 共10页
简 介:
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L083WC2A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit Overview The N02L083WC2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02L083WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 8 SRAMs Features Single Wide Power Supply Range 2.3 to 3.6 Volts Very low standby current 2.0A at 3.0V (Typical) Very low operating current 2.0mA at 3.0V and 1s (Typical) Very low Page Mode operating current 0.8mA at 3.0V and 1s (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 30ns OE access time Automatic power down to standby mode TTL compatible three-state output driver Product Family Part Number N02L083WC2AT N02L083WC2AN Package Type 32 - TSOP I 32 - STSOP I 55n……
