器件名称:
N04Q1618C2Bx-70C
功能描述:
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K
文件大小:
298.83KB 共13页
简 介:
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04Q16yyC2B Advance Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability. The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC. The devices are available in standard BGA and TSOP packages. The devices are also available as Known Good Die (KGD) for embedded package applications. Features Multiple Power Supply Range……
