器件名称:
N08L163WC2CZ1
功能描述:
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K
文件大小:
241.93KB 共9页
简 介:
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC2C is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs Features Single Wide Power Supply Range 2.2 to 3.6 Volts Very low standby current 2.0A at 3.0V (Typical) Very low operating current 1.5mA at 3.0V and 1s(Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.5V Very fast output enable access time 25ns OE access time Automatic power down to standby mode TTL com……
