器件名称:
MC33153DR2
功能描述:
Single IGBT Gate Driver
文件大小:
131.3KB 共13页
简 介:
MC33153 Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dualinline and surface mount packages. Features http://onsemi.com MARKING DIAGRAMS 8 SOIC8 D SUFFIX CASE 751 1 33153 ALYW G High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors PbFree Packages are Available 1 VCC 6 VCC VCC Short Circuit Latch S Q R VEE Overcurrent Latch S Q R Short Circuit Comparator VCC Overcurrent Comparator 130 mV 65 mV VCC 270 mA VEE VCC 2 Current Sense 1 Input Kelvin GND 1 8 PDIP8 P SUFFIX CASE 626 1 MC33153P AWL YYWWG Fault Output 7 A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = PbFree Package (Note: Microdot may be in either location) PIN CONNECTIONS Current Sense Input Kelvin GND VEE 1 2 3 4 (Top View) 8 Fault Blanking/ Desaturat……
