器件名称: STP20N10
功能描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
文件大小: 140.58KB 共9页
简 介:STP20N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP20N10
s s s s s s s s
V DSS 100 V
R DS( on) < 0.12
ID 20 A
TYPICAL RDS(on) = 0.09 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 1 2
TO-220
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
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Value 100 100 ± 20 20 14 80 105 0.7 -65 to 175 175
Unit V V V A A A W W/o C
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C C
() Pulse width limited by safe operating area
December 1996
1/9
STP20N10
THERMAL DATA
R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 1.43 62.5 0.5 300
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C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Rep……
