器件名称:
STP21N06LFI
功能描述:
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
文件大小:
197.53KB 共10页
简 介:
STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP21N06L STP21N06LFI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.085 < 0.085 ID 21 A 14 A TYPICAL RDS(on) = 0.065 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP21N06L VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP21N06LFI 60 60 ± 15 21 14 84 80 0.53 -65 to 175 175 14 9 84 35 0.23 2000 Unit V V V A A A W W/o C V o o C C () Pulse width limited by safe operating area July 1993 1/10 STP21N06L/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.88 62.5 0.5 300 ISOWATT220 4.29 o o o C/W C/W C/W o C Thermal……