器件名称:
TC2320TG
功能描述:
N- and P- Channel Enhancement-Mode Dual MOSFET
文件大小:
434.44KB 共3页
简 介:
TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel 200V P-Channel -200V RDS(ON) (max) N-Channel 7.0 P-Channel 12 Order Number/Package SO-8 TC2320TG Features Low threshold Low on resistance Independent, electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage Low Threshold DMOS Technology The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Application Medical Ultrasound Transmitters High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces Package Option S1 1 N-Channel BVDSS BVDGS ±20V -55°C to +1……
