器件名称:
1N5552US
功能描述:
This specification covers the performance requirements for silicon, general purpose,
文件大小:
202.03KB 共28页
简 介:
The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 July 2004. INCH-POUND MIL-PRF-19500/420H 19 April 2004 SUPERSEDING MIL-PRF-19500/420G 30 December 2002 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER, TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US, JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD, JANHCE, JANKCA, JANKCD, AND JANKCE This specification is approved for use by all Departments and Agencies of the Department of Defense. * 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die. 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C and ratings apply to all case outlines. Col. 1 Type Col. 2 V(BR) Col. 3 VRWM and V(BR)min Col. 4 IO1 TL = +55°C; L = .375 inch (1) (2) (3) A dc 5 5 5 5 5 Col. 5 IFSM IO = 2 A dc tp = 1/120 s TA = +55°C A(pk) 100 100 100 100 100 Col. 6 TJ Col. 7 IO2 TA = +55°C (2) (4) A dc 3 3 3 3 3 Col. 8 TSTG The requirements for acquiring the product described herein shall consist of this s……
