器件名称:
1N5554
功能描述:
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode
文件大小:
159.88KB 共4页
简 介:
POWER DISCRETES Description Quick reference data VR = 200 - 1000V IF = 5.0A trr = 2S VF = 1.0V 1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode Features Low reverse leakage current Hermetically sealed in fused metal oxide Good thermal shock resistance Low forward voltage drop Avalanche capability These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications @ TA = 25°C unless otherwise specified. Symbol Working Reverse Voltage Average Forward Current @ 55°C in free air, lead length 0.375" Repetitive Surge Current @ 55°C in free air, lead length 0.375" Non-Repetitive Surge Current (tp = 8.3mS @ VR & TJMAX) (tp = 8.3mS, @ VR & 25°C) Storage Temperature Range VRWM IF(AV) 1N 5550 3SM2 200 1N 5551 3SM4 400 1N 5552 3SM6 600 5.0 1N 5553 3SM8 800 1N 5554 3SM0 1000 Units V A IFRM 25 A IFSM TSTG 100 150 -65 to +175 A °C Revision: October 4, 2007 1 www.semtech.com 1N5550 THRU 1N5554 3SM2 THRU 3SM0 POWER DISCRETES Electrical Specifications Symbol Average Forward Current (sine wave) - max. TA = 55°C - max. L = 3/8"; TL = 55°C I2t for fusing (t = 8.3mS) max Forward Voltage Drop max. @ IF = 3.0A, Tj = 25°C Reverse Current max. @ VRWM, Tj = 25°C @ VRWM, Tj = 125°C Reverse Recovery Time max. 0.5A IF to 1.0A IRM recovers to 0.25A IRM(REC) Junction Capacitance typ. @ VR = 5V, f = 1MHz 1N 5550 3SM2 1N 5551 3S……
