器件名称:
MJF15030
功能描述:
COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
246.16KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJF15030/D Complementary Power Transistors MJF15030 PNP MJF15031 COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS NPN For Isolated Package Applications Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Electrically Similar to the Popular MJE15030 and MJE15031 150 VCEO(sus) 8 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain–Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc UL Recognized, File #E69369, to 3500 VRMS Isolation CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Rating Symbol VCEO VCB VEB Value 150 150 5 Unit Vdc Vdc Vdc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Test No. 1 Per Fig. 11 Test No. 2 Per Fig. 12 Test No. 3 Per Fig. 13 VISOL 4500 3500 1500 8 16 2 VRMS Collector Current — Continuous — Peak Base Current IC IB Adc Adc Total Power Dissipation* @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD 36 0.29 Watts W/_C Watts W/_C 2 0.016 Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol RθJA Max U……
