器件名称:
MJL21193_07
功能描述:
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
文件大小:
152.31KB 共6页
简 介:
MJL21193, MJL21194 Preferred Device Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain http://onsemi.com hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second PbFree Packages are Available* 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol VCEO VCBO VEBO VCEX IC IB Value 250 400 5 400 16 30 5 Unit Vdc Vdc Vdc Vdc Adc Adc CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage CollectorEmitter Voltage 1.5 V Collector Current Continuous Peak (Note 1) Base Current Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 200 1.43 W W/_C _C TJ, Tstg 65 to + 150 MJL2119x AYYWWG TO3PBL (TO264) CASE 340G THERMAL CHARACTERISTICS Characteristic x A YY WW G = 3 or 4 = Assembly Location = Year = Work Week = PbFree Package Symbol RqJC Max 0.7 Unit Thermal Resistance, JunctiontoCase _C/W ORDERING INFORMATION Device MJL21193 MJL21193G MJL21194 MJL21194G Package TO264 TO264 (PbFree) TO264 TO264 (PbFree) Shipping 25 Units / Rail 25 Units / Rail 25 Units / Rail 25 Units / Rail Stresses exceeding Maximum Ratings may damage the devic……
