器件名称:
MMBTH10RG
功能描述:
NPN RF Transistor
文件大小:
45.7KB 共3页
简 介:
MMBTH10RG MMBTH10RG NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from process 42. C E B SOT-23 Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 40 40 4.0 50 -55 ~ 150 Units V V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) fT Ccb rb’Cc Parameter Test Condition IC = 1.0 mA, IB = 0 IC = 10 A, IE = 0 IE = 1.0 A, IC = 0 VCB = 30 V, IE = 0 IC = 1.0 mA, VCE = 6.0 V IC = 10 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 5.0 mA, VCB = 10 V, f = 79.8 MHz 450 0.6 12 50 Min. 40 40 4.0 100 120 0.2 Max. Units V V V nA V V MHz pF pS Collector-Emitter Sustaining Voltage * Collector-Base……
