器件名称:
1N5817_07
功能描述:
Schottky Barrier Rectifier
文件大小:
134.55KB 共3页
简 介:
1N5817 - 1N5819 — Schottky Barrier Rectifier August 2007 1N5817 - 1N5819 Schottky Barrier Rectifier 1.0 A operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current .375” lead length @ TA = 90°C Non-repetitive Peak Surge Current 8.3 ms Single Half-Sine Wave Operating Junction and Storage Temperature Value 1N5817 20 1N5818 30 1.0 25 -65 to +125 1N5819 40 Units V A A °C Thermal Characteristics Symbol PD RθJA RθJC Power Dissipation Maximum Thermal Resistance, Junction to Ambient Maximum Thermal Resistance, Junction to Case Parameter Value 1.25 100 45 Units W °C/W °C/W * Mounted on Cu-pad Size 5mm x 5mm on PCB Electrical Characteristics (per diode) Symbol VF IR CT Forward Voltage Reverse Current @ rated VR Total Capacitance VR = 4.0 V, f = 1.0 MHz Parameter @ 1.0 A @ 3.0 A TC = 25 °C TC = 100 °C Value 1N5817 450 750 1N5818 550 875 0.5 10 110 1N5819 600 900 Units mV mA pF * Pulse Test: Pulse Width=300μs, Duty Cycle=2% 2007 Fairchild Semiconductor Corporation 1N5817 - 1N5819 Rev. 1.0.0 1 www.fairchildsemi.com 1N5817 - 1N5819 — Schottky Barrier Rectifier Typical Performance Characteristics 2007 Fairchild Semiconductor Corporation 1N5817 - 1N5819 Rev. 1.0.0 2 www.fair……
