器件名称:
Q62702-A938
功能描述:
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance)
文件大小:
39.04KB 共2页
简 介:
BAT 18 Silicon RF Switching Diode q q BAT 18 … Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance Type BAT 18 BAT 18-04 Marking A2 AU Ordering Code Pin Configuration Q62702-A787 Q62702-A938 Package1) SOT 23 BAT 18-05 AS Q62702-A940 BAT 18-06 AT Q62702-A942 Maximum Ratings per Diode Parameter Reverse voltage Forward current Operating and storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR IF Top Tstg Values 35 100 Unit V mA – 55 … + 150 C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAT 18... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V VR = 20 V, TA = 60 C Diode capacitance , f = 1 MHz VR = 20 V Forward resistance IF = 5 mA, f = 100 MHz Series inductance Symbol min. VF IR – – CT rf LS – – – – – 0.75 0.4 2 20 200 1 0.7 – pF nH – Values typ. 0.38 max. 1.2 V nA Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2 ……
