器件名称: Q62702-A971
功能描述: Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.)
文件大小: 79.17KB 共3页
简 介:Silicon Schottky Diode
q Low
BAT 62
barrier diode for detectors up to GHz frequencies.
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 62 Marking 62 Ordering Code Pin Configuration (tape and reel) Q62702-A971 Package1) SOT-143
Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 85 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS
≤ ≤
Symbol VR IF Ptot Tj Tstg
Values 40 20 100 150 – 55 … + 150
Unit V mA mW C
810 650
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
02.96
BAT 62
Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 40 V Forward voltage IF = 2 mA Diode capacitance VR = 0, f = 1 MHz Case capacitance Differential resistance VR = 0, f = 10 kHz Series inductance Symbol min. IR VF CT CC R0 LS – – – – – – Values typ. – 0.58 0.35 0.1 225 2 max. 10 1 0.6 – – – k nH
A
Unit
V pF
Forward current IF = f (VF)
Forward current IF = f (TS; TA*) *Package mounted on alumina
Semiconductor Group
2
BAT 62
Reverse current IR = f (VR) f = 1 MHz
Diode capacitance CT = f (VR) f = 1 MHz
Rectifier voltage V0 = f (Vi) f = 900 MHz
Semiconductor Group
3
……
