器件名称: Q62702-B599
功能描述: Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
文件大小: 31.66KB 共3页
简 介:BBY 52 Silicon Tuning Diode
High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment
Type BBY 52
Marking Ordering Code S5s Q62702-B599
Pin Configuration 1 = A1 2 = A2
Package 3 = C1/2 SOT-23
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C
VR IF Top Tstg
Semiconductor Group
1
Jul-04-1996
BBY 52
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
10 200
nA
VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C
AC characteristics Diode capacitance
CT
1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 2 2.2 1.45
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/CT4
1.1 2.1
1.8 pF nH -
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
rs CC Ls
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group
2
Jul-04-1996
BBY 52
Diode capacitance CT = f (VR) f = 1MHz
2.4 pF
CD
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0
1.5
2.0
2.5
3.0
V
4.0
VR
Package
Semiconductor Group
3
Jul-04-1996
……
