器件名称:
Q62702-B664
功能描述:
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
文件大小:
18.88KB 共3页
简 介:
BBY 52-03W Silicon Tuning Diode High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment Type BBY 52-03W Marking Ordering Code I (white) Q62702-B664 Q62702- Pin Configuration 1=C 2=A - Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance CT 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 1.8 2.2 1.45 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.1 2.1 1.8 pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 pF CD 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 1.5 2.0 2.5 3.0 V 4.0 VR Semiconductor Group 3 Feb-04-1997 ……
