器件名称:
Q62702-B792
功能描述:
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
文件大小:
44.78KB 共3页
简 介:
Silicon Variable Capacitance Diode BB 641 q q q For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance 1 2 Type Ordering Code (tape and reel) Q62702-B792 Pin Configuration Marking 1 2 C A red G Package BB 641 SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R ≥ 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 – 55 … + 150 – 55 … + 150 Unit V V mA °C °C VR VRM IF Top Tstg Rth JA ≤ 450 K/W Semiconductor Group 1 05 95 BB 641 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio Value typ. max. Unit IR – – – – 69 2.88 24 – 1.55 1.8 20 200 nA CT 62 2.65 76 3.1 pF CT1/CT28 22 CT/CT – 2.5 – – % – – – nH – VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V … 28 V, f = 1 MHz Series resistance CT = 30 pF, f = 100 MHz Series inductance rS Ls Package Outline SOD-323 Dimensions in mm Semiconductor Group 2 BB 641 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 ……
