器件名称:
Q62702-C1138
功能描述:
NPN Silicon Darlington Transistors (High current gain High collector current)
文件大小:
142.29KB 共5页
简 介:
BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain q High collector current q 2 1 3 Type BC 617 BC 618 Marking – Ordering Code Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 617 40 50 BC 618 55 80 12 500 800 100 200 625 150 Unit V mA mW C – 65 … + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 617 BC 618 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown voltage IC = 100 A BC 617 BC 618 Emitter-base breakdown voltage IE = 10 A Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 C VCB = 60 V, TA = 150 C Emitter cutoff current VEB = 4 V DC current gain IC = 100 A; VCE = 5 V IC = 10 mA; VCE = 5 V1) IC = 200 mA; VCE = 5 V1) IC = 1000 mA; VCE = 5 V1) BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 VCEsat VBEsat BC 617 BC 618 BC 617 BC 618 IEB0 hFE 4000 ……
