器件名称:
Q62702-C1526
功能描述:
NPN Silicon AF Transistors (For general AF applications High current gain)
文件大小:
134.58KB 共6页
简 介:
NPN Silicon AF Transistors BCW 65 BCW 66 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 67, BCW 68 (PNP) q Type BCW 65 A BCW 65 B BCW 65 C BCW 66 F BCW 66 G BCW 66 H Marking EAs EBs ECs EFs EGs EHs Ordering Code (tape and reel) Q62702-C1516 Q62702-C1612 Q62702-C1479 Q62702-C1892 Q62702-C1526 Q62702-C1632 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 65 BCW 66 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCW 65 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 32 60 5 Values BCW 66 45 75 5 800 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW C 285 215 K/W 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCW 65 BCW 66 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 65 BCW 66 Collector-base breakdown voltage IC = 10 A BCW 65 BCW 66 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 C VCB = 45 V, TA = 150……
