器件名称:
QST2
功能描述:
General purpose amplification (12V, 3A)
文件大小:
68.33KB 共3页
简 介:
QST2 Transistors General purpose amplification (12V, 3A) QST2 zApplication Low frequency amplifier Driver zExternal dimensions (Unit : mm) 2.8 1.6 (1) zFeatures 1) Collector current is large. 2) Collector saturation voltage is low. 250mV VCE(sat) at IC = 3A / IB = 60mA (4) (5) (6) 0.4 0.16 (3) (2) ROHM : TSMT6 Each lead has same dimensions Abbreviated symbol : T02 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Symbol VCBO VCEO VEBO IC ICP PC Limits 15 12 6 6 10 500 1.25 150 55 to +150 Unit V V V A A 1 mW 2 W 3 °C °C zEquivalent circuit 6pin 5pin 4pin Tj Junction temperature Range of storage temperature Tstg 1 Single pulse, Pw=1ms 2 Each Terminal Mounted on a Recommended 3 Mounted on a 25mm×25mm× t 0.8mm Ceramic substrate 1pin 2pin 3pin zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 270 Typ. 120 250 80 Max. 100 100 250 680 Unit V V V nA nA mV MHz pF Conditions IC= 10A IC= 1mA IE= 10A VCB= 15V VEB= 6V IC= 3A, IB= 60mA VCE= 2V, IC= 500mA VCE= 2V, IE=500mA, f=100MHz VCB= 10V, IE=0A, f=1MHz 0.85 Rev.B 2.9 1/2 QST2 T……
