EEPW首页| 器件索引| 厂商列表| IC替换| 微缩略语| 电路图查询
器件查询:
400万器件资料库等您来搜!
首页>IRF> SD253N12S15MBV

SD253N12S15MBV

器件名称: SD253N12S15MBV
功能描述: FAST RECOVERY DIODES Stud Version
文件大小: 139.69KB 共7页
生产厂商: IRF
下  载: 在线浏览点击下载
简  介: Bulletin I2065 rev. A 09/94 SD253N/R SERIES FAST RECOVERY DIODES Features High power FAST recovery diode series 1.5 to 2.0 s recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version JEDEC DO-205AB (DO-9) Maximum junction temperature 125°C Stud Version 250A Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics Parameters IF(AV) @ TC IF(RMS) IFSM @ 50Hz @ 60Hz I t 2 SD253N/R 250 85 392 5350 5600 143 130 400 to 1600 1.5 to 2.0 Units A °C A A A KA2s KA2s V s °C °C @ 50Hz @ 60Hz V RRM range trr range @ TJ TJ 25 - 40 to 125 case style DO-205AB (DO-9) www.irf.com 1 SD253N/R Series Bulletin I2065 rev. A 09/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage VRRM max. repetitive Code peak and off-state voltage V 04 SD253N/R..S15 08 10 12 SD253N/R..S20 14 16 400 800 1000 1200 1400 1600 VRSM , maximum nonrepetitive peak voltage V 500 900 1100 1300 1500 1700 I RRM max. TJ = 125°C mA 35 Forward Conduction Parameter IF(AV) Max. average forward current @ Case temperature IF(RMS) Max. RMS current IFSM Max. peak, one-cycle non-repetitive forward current SD253N/R 250 85 392 5350 5600 4500 4710 Units A °C A Conditions 180° conduction, half sine wave. DC @ 74°C case temperature t = 10ms t = 8.3ms No voltage reap……
相关电子器件
器件名 功能描述 生产厂商
SD253N12S15MBV FAST RECOVERY DIODES Stud Version IRF
《电子产品世界》杂志社 版权所有 北京东晓国际技术信息咨询有限公司
Copyright ©2002 ELECTRONIC ENGINEERING & PRODUCT WORLD. All rights reserved.
京ICP备12027778号-2