器件名称:
TC2696
功能描述:
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
文件大小:
39.23KB 共2页
简 介:
TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.6 m, Wg = 5 mm 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point , f = 2.45GHz VDS = 8 V, IDS = 600 mA Linear Power Gain, f = 2.45GHz VDS = 8 V, IDS = 600 mA Intercept Point of the 3rd-order Intermodulation, f = 2.45GHz VDS = 8 V, IDS = 600 mA, *PSCL = 20 dBm Power Added Efficiency at 1dB Compression Power, f = 2.45GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 10 mA Drain-Gate Breakdown Voltage at IDGO =2.5 mA Thermal Resistance MIN 32.5 12 TYP 33 14 43 43 1.2 ……
