器件名称:
TC58FVB641XB-70
功能描述:
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
文件大小:
603.52KB 共53页
简 介:
TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8,388,608 words × 8 bits or as 4,194,304 words × 16 bits. The TC58FVT641/B641 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = 40°C~85°C Organization 8M × 8 bits / 4M × 16 bits Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes Block erase architecture 8 × 8 Kbytes / 127 × 64 Kbytes Boot block architecture TC58FVT641FT/XB: top boot block TC58FVB641FT/XB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 10 A (Standby) 30 mA (Read operation) 15 mA (Progra……
