器件名称:
TC58FVM6B2AXB65
功能描述:
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
文件大小:
754.53KB 共61页
简 介:
TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage VDD = 2.3 V~3.6 V Operating temperature Ta = 40°C~85°C Organization 8M × 8 bits/4M × 16 bits Functions Simultaneous Read/Write Page Read Auto Program, Auto Page Program Auto Block Erase, Auto Chip Erase Fast Program Mode/Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling/Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes Block erase architecture 8 × 8 Kbytes/127 × 64 Kbytes Boot block architecture TC58FVM6T2A: top boot block TC58FVM6B2A: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access Time (Random/Page) VDD 2.7~3.6 V 2.3~3.6 V CL = 30 pF 65 ns/25 ns 70 ns/30 ns CL = 100 pF ……
