器件名称:
TC59LM906AMG-37
功能描述:
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
文件大小:
798.72KB 共59页
简 介:
TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 (SSTL_18 / HSTL_Interface) 4,194,304-WORDS × 8 BANKS × 16-BITS 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906AMG is organized as 8,388,608-words × 8 banks × 8 bits. TC59LM914/06AMG feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. TC59LM914/06AMG can operate fast core cycle compared with regular DDR SDRAM. TC59LM914/06AMG is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition. FEATURES PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 mA 20 mA -50 6.0 ns 5.5 ns 5.0 ns 27.5 ns 24.0 ns 240 mA 80 mA 20 mA Fully Synchronous Operation D……
