器件名称:
TIP100
功能描述:
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
文件大小:
218.99KB 共6页
简 介:
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP100/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc Collector–Emitter Sustaining Voltage — @ 30 mAdc VCEO(sus) = 60 Vdc (Min) — TIP100, TIP105 VCEO(sus) = 80 Vdc (Min) — TIP101, TIP106 VCEO(sus) = 100 Vdc (Min) — TIP102, TIP107 Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 2.5 Vdc (Max) @ IC = 8.0 Adc Monolithic Construction with Built–in Base–Emitter Shunt Resistors TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP100, TIP105 60 60 TIP101, TIP106 80 80 TIP102, TIP107 100 100 TIP100 TIP101* TIP102* TIP105 TIP106* TIP107* *Motorola Preferred Device NPN PNP Symbol VCEO VCB VEB IC IB PD E Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 8.0 15 1.0 Collector Current — Continuous Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 80 0.64 30 Watts W/_C mJ Watts W/_C Unclamped Inductive Load Energy (1) PD 2.0 0.016 TJ, Tstg – 65 to + 150 DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 80 WATTS _C THERMAL ……
