器件名称:
TIP101
功能描述:
Monolithic Construction With Built In Base- Emitter Shun
文件大小:
51.21KB 共4页
简 介:
TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP105/106/107 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP100 : TIP101 : TIP102 Value 60 80 100 60 80 100 5 8 15 1 2 80 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C R1 R2 E Equivalent Circuit C B VCEO Collector-Emitter Voltage : TIP100 : TIP101 : TIP102 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG R 1 10 k R 2 0.6 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP100 : TIP101 : TIP102 Collector Cut-off Current : TIP100 : TIP101 : TIP102 ICBO Collector Cut-off Current : TIP100 : TIP101 : TIP102 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance VCE = 60V, IE = 0 VCE = 80V, IE = 0 VCE = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 3A VCE = 4V, IC = 8A IC = 3A, IB = 6mA IC = 8A, IB = 80mA VCE = 4V, IC = 8A VCB……
