器件名称:
TIP105_03
功能描述:
PNP SILICON POWER DARLINGTON TRANSISTOR
文件大小:
119.14KB 共5页
简 介:
TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s AUDIO POWER AMPLIFIER s GENERAL POWER SWITCHING s DC-AC CONVERTER s EASY DRIVER FOR LOW VOLTAGE DC MOTOR s 3 1 2 TO-220 DESCRIPTION The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications. The preferred complementary NPN type is the TIP102. INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Storage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -8 -15 -1 80 2 -65 to 150 150 Unit V V V A A A W W o o C C April 2003 1/5 TIP105 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CBO I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -30 V V CE = -60 V V E……
