器件名称:
TIP107
功能描述:
Monolithic Construction With Built In Base- Emitter Shun
文件大小:
50.15KB 共4页
简 介:
TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP100/101/102 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP105 : TIP106 : TIP107 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 -8 - 15 -1 2 80 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C R1 R2 E Equivalent Circuit C B VCEO Collector-Emitter Voltage : TIP105 : TIP106 : TIP107 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG R 1 10 k R 2 0.6 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP105 : TIP106 : TIP107 Collector Cut-off Current : TIP105 : TIP106 : TIP107 ICBO Collector Cut-off Current : TIP105 : TIP106 : TIP107 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -100V, IE = 0 VBE= -5V, IC = 0 VCE = -4V, IC = -3A VCE = -4V, IC = -8A IC = -3A, IB = -6mA IC = -8A, ……
