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TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP110 : TIP111 : TIP112 Value 60 80 100 60 80 100 5 2 4 50 2 50 150 - 65 ~ 150 Units V V V V V V V A A mA W W °C °C R1 R2 E B Equivalent Circuit C VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP110 : TIP111 : TIP112 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 10 k R 2 0.6 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 ICBO Collector Cut-off Current : TIP110 : TIP111 : TIP112 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = 10V, IE = 0, f = 0.1MHz 1000 500 2.5 2.8 100 V V pF 1 1 ……
