器件名称:
TIP112F
功能描述:
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUIL
文件大小:
41.37KB 共2页
简 介:
SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. U TIP112F EPITAXIAL PLANAR NPN TRANSISTOR A C FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117F. E S K L M D D L T MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 100 100 5 2 A 4 50 2 W 20 150 mA UNIT T N N T V Q V V O 1 2 3 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX Φ3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 F G J 1. BASE B TO-220IS EQUIVALENT CIRCUIT C -65 150 B P 2. COLLECTOR 3. EMITTER R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ) SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=50V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 VCE=4V, IC=1A VCE=4V, IC=2A IC=30mA, IB=0 IC=2A, IB=8mA VCE=4V, IC=2A VCB=10V, IE=0, f=0.1MHz MIN. 1000 500 100 TYP. MAX. 2 mA 1 2 ……
