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TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.) Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP110/111/112 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP115 : TIP116 : TIP117 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 -2 -4 - 50 2 50 150 - 65 ~ 150 Units V V V V V V V A A mA W W °C °C R1 R2 E Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP115 : TIP116 : TIP117 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 10 k R 2 0.6 k Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP115 : TIP116 : TIP117 Collector Cut-off Current : TIP115 : TIP116 : TIP117 ICBO Collector Cut-off Current : TIP115 : TIP116 : TIP117 IEBO hFE VCE(sat) VBE(on) Cob Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -100V, IE = 0 VBE = -5V, IC = 0 VCE = -4V,IC = -1A VCE = -4V, IC = -2A IC = -2A, IB = -8mA VCE = -4V, IC = -2A VCB = -10V, IE = 0, f = 0.1MH……
