器件名称:
TIP117F
功能描述:
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUIL
文件大小:
42.02KB 共2页
简 介:
SEMICONDUCTOR TECHNICAL DATA MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. U TIP117F EPITAXIAL PLANAR PNP TRANSISTOR A C FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F. E S K L M D D L T MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -100 -100 -5 -2 A -4 -50 2 W 20 150 -65 150 B UNIT T N N T V Q V V O 1 2 3 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX Φ3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 F G J 1. BASE B TO-220IS mA EQUIVALENT CIRCUIT C P 2. COLLECTOR 3. EMITTER R1 = 10k R2 = 0.6k E ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ) SYMBOL ICEO ICBO IEBO hFE VCEO(SUS) VCE(sat) VBE(ON) Cob TEST CONDITION VCE=-50V, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 VCE=-4V, IC=-1A VCE=-4V, IC=-2A IC=-30mA, IB=0 IC=-2A, IB=-8mA VCE=-4V, IC=-2A VCB=-10V, IE=0, f=0.1MHz MIN. 1000 500 ……
