器件名称:
TIP122FP_03
功能描述:
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
文件大小:
279.56KB 共6页
简 介:
TIP122FP TIP127FP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s STMicroelectronics PREFERRED SALESTYPES FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING DESCRIPTION The TIP122FP is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220FP fully molded isolated package. It is intented for use in power linear and switching applications. The complementary PNP type is TIP127FP. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 K R2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot Visol T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Dissipation at T case ≤ 25 o C o T amb ≤ 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature Value TIP122FP TIP127FP 100 100 5 5 8 0.1 29 2 1500 -65 to 150 150 Unit V V V A A A W W V o o C C For PNP types voltage and current values are negative. March 2003 1/6 TIP122FP / TIP127FP THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 4.3 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEO I CBO I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I E = 0) Emitter Cu……
